钱庆凯 博士 副教授

个人简历

2008-2012年：清华大学物理系学士学位

2012-2014年：清华大学物理系硕士学位

2014-2018年：香港科技大学电子及计算机工程系博士学位

2019-2020年：美国宾夕法尼亚州立大学电机工程系博士后

2021年-至今 ： 重庆大学副教授

 

研究方向

1. 仿生光电突触器件、光电探测器、发光器件、太阳能电池等光电子器件应用研究

2. 光电功能材料性质的第一性原理计算研究

 

研究成果

主要从事光电子器件应用研究和相关光电材料性能的第一性原理计算。在相关领域的国际期刊及会议共发表学术论文50余篇，获批美国专利2项，中国专利1项，其中以第一作者和通讯作者发表期刊论文17篇，全部为SCI收录，包括纳米技术、应用物理、理论物理和物理化学等领域的国际权威期刊ACS Nano, npj 2D Materials and Applications, EcoMat, Chemical Communications, Nanoscale，Physical Review B等，多次参加物理、材料领域国际顶级会议和担任Nano Letters, ACS Appl. Mater. Interfaces, J. Phys. Chem. C, J. Phys.: Condens. Matter等多个国际知名期刊审稿人，担任《稀有金属》、Vacuum杂志青年编委。

 

代表论著

1.         Xiao, H.; Qian, Q.*; Zang, Z.* Anchoring palladium nanoparticles on CsPbBr3 perovskite nanocrystals for enhanced photocatalytic CO2 reduction. Sci. China Mater. 2023, https://doi.org/10.1007/s40843-022-2304-2

2.         Ma, W.; Liang, D.; Qian, Q.; Mo, Q.; Zhao, S.; Cai, W.; Chen, J.*; Zang, Z.* Near-unity quantum yield in zero-dimensional lead-free manganese-based halides for flexible X-ray imaging with high spatial resolution. eScience 2022, 100089.

3.         Shi, Y.; Liang, D.; Mo, Q.; Lu, S.; Sun, Z.; Xiao, H.*; Qian, Q.*; Zang, Z.* Highly efficient copper-based halide single crystals with violet emission for visible light communication. Chem. Commun. 2023, 59, 583-586.

4.         Xiao, H.; Liu, Z.; Qian, Q.; Du, J.*; Li, R.*; Zang, Z.* Enhanced amplified spontaneous emission of CsPbBr3 quantum dots via gold nanorods-induced localized surface plasmon resonance. Appl. Phys. Lett. 2022, 121, 222102.

5.         Wang, B.; Yang, X.; Chen, S.; Lu, S.; Zhao, S.; Qian, Q.; Cai, W.*; Wang, S.*; Zang, Z.* Flexible perovskite scintillators and detectors for X-ray detection. iScience 2022, 25, 105593.

6.         Wang, B.; Jia, Z.; Yang, X.; Lu, S.; Zhao, J.; Sun, Z.; Qian, Q.*; Lin, Q.*; Zang, Z.* Flexible and stable copper-based halide scintillator for high-performance X-ray imaging. Chem. Commun. 2022, 58, 13206-13209.

7.         Liang, D.; Liu, X.; Luo, B.; Qian, Q.*; Cai, W.; Zhao, S.; Chen, J.*; Zang, Z.* High quantum yield of In-based halide perovskites for white light emission and flexible x-ray scintillators. EcoMat 2022, e12296.

8.         Mo, Q.; Qian, Q.; Shi, Y.; Cai, W.; Zhao, S.; Zang, Z.* High Quantum Efficiency of Stable Sb-Based Perovskite-Like Halides toward White Light Emission and Flexible X-Ray Imaging. Adv. Opt. Mater. 2022, 2201509.

9.         Xiao, H.; Fu, J.; Wei, X.; Wang, B.; Qian, Q.; Huang, J.*; Li, R.*; Zang, Z.* Photoelectron‐Extractive and Ambient‐Stable CsPbBr3@SnO2 Nanocrystals for High‐Performance Photodetection. Laser Photonics Rev. 2022, 2200276.

10.     Wang, M.; Liang, D.; Ma, W.; Mo, Q.; Zang, Z.; Qian, Q.; Cai, W.* Significant performance enhancement of UV-Vis self-powered CsPbBr3 quantum dots based photodetectors induced by ligand modification and P3HT embedding. Opt. Lett. 2022, 47, 4512-4515.

11.     Cai, W.; Li, M.; Li, H.; Qian, Q.^*; Zang, Z.^* Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping. Appl. Phys. Lett. 2022, 121, 62108.

12.     Qian, Q.^*; Wu, W.; Peng, L.; Wang, Y.; Tan, A. M. Z.; Liang, L.; Hus, S. M.; Wang, K.; Choudhury, T. H.; Redwing, J. M.; Puretzky, A. A.; Geohegan, D. B.; Hennig, R. G.; Ma, X.; Huang, S.^* Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide. ACS Nano 2022, 16, 7428-7437.

13.     Qian, Q.; Zu, R.; Ji, Q.; Jung, G. S.; Zhang, K.; Zhang, Y.; Buehler, M. J.; Kong, J.; Gopalan, V.; Huang, S.^* Chirality-Dependent Second Harmonic Generation of MoS₂ Nanoscroll with Enhanced Efficiency. ACS Nano 2020, 14, 13333-13342.

14.     Qian, Q.; Shen, X.; Luo, D.; Jia, L.; Kozina, M.; Li, R.; Lin, M.; Reid, A. H.; Weathersby, S.; Park, S.; Yang, J.; Zhou, Y.; Zhang, K.; Wang, X.; Huang, S.^* Coherent Lattice Wobbling and Out-of-Phase Intensity Oscillations of Friedel Pairs Observed by Ultrafast Electron Diffraction. ACS Nano 2020, 14, 8449-8458.

15.     Qian, Q.; Peng, L.; Perea-Lopez, N.; Fujisawa, K.; Zhang, K.; Zhang, X.; Choudhury, T. H.; Redwing, J. M.; Terrones, M.; Ma, X.; Huang, S.^* Defect creation in WSe₂ with a microsecond photoluminescence lifetime by focused ion beam irradiation. Nanoscale 2020, 12, 2047-2056.

16.     Qian, Q.^*; Lei, J.; Wei, J.; Zhang, Z.; Tang, G.; Zhong, K.; Zheng, Z.; Chen, K. J.^* 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current. npj 2D Mater. Appl. 2019, 3, 24.

17.     Qian, Q.; Zhang, Z.; Chen, K. J.^* Layer-dependent second-order Raman intensity of MoS₂ and WSe₂ : Influence of intervalley scattering. Phys. Rev. B 2018, 97.

18.     Qian, Q.; Zhang, Z.; Chen, K. J.^* In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS₂ and WSe₂ for High-k Integration: A First-Principles Study. Langmuir 2018, 34, 2882-2889.

19.     Qian, Q.; Zhang, Z.; Hua, M.; Wei, J.; Lei, J.; Chen, K. J.^* Remote N₂ plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS₂ MOSFET. Appl. Phys. Express 2017, 10.

20.     Qian, Q.; Zhang, Z.; Hua, M.; Tang, G.; Lei, J.; Lan, L.; Xu, Y.; Yan, R.; Chen, K. J.^* Enhanced dielectric deposition on single-layer MoS₂ with low damage using remote N₂ plasma treatment. Nanotechnology 2017, 28, 175202.

21.     Qian, Q.; Li, B.; Hua, M.; Zhang, Z.; Lan, F.; Xu, Y.; Yan, R.; Chen, K. J.^* Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS₂ MOSFET with an AlN Interfacial Layer. Sci.  Rep. 2016, 6, 27676.

22.     Qian, Q.; Li, G.; Jin, Y.; Liu, J.; Zou, Y.; Jiang, K.; Fan, S.; Li, Q.^* Trap-State-Dominated Suppression of Electron Conduction in Carbon Nanotube Thin-Film Transistors. ACS Nano 2014, 8, 9597-9605.

23.     Qian, Q.; Liu, J.; Li, Q.^*; Zou, Y.; Jin, Y.; Li, G.; Jiang, K.; Fan, S. Modeling and optimization of ambipolar graphene transistors in the diffusive limit. J. Appl. Phys. 2013, 114, 164508.

 

获批专利

1.    Q. Qian, Q. Li, “Thin Film Transistor,”US Patent US9548391, filed Aug. 7, 2013, and issued Jan. 17, 2017

2.    J. Chen, Q. Qian, “Field-effect transistors with semiconducting gate”, US Patent US11139374B2, filed Aug. 9, 2019, and issued Oct. 5, 2021

3.    陈敬, 钱庆凯, “具有半导体性栅极的场效应晶体管”, 中华人民共和国专利ZL201910730782.7, 2019年8月8日申请, 2022年4月8日授权

 

联系方式

Email：qqian@cqu.edu.cn

办公室：重庆大学A区主教学楼1301室