蔡文思 博士,讲师
2012.09-2015.06 曼彻斯特大学 电子工程 本科
2015.09-2019.10 曼彻斯特大学 电气及电子工程 博士
2020.05-2023.04 重庆大学 光电工程学院 博士后
2023.05-至今 重庆大学 光电工程学院 讲师
研究方向
1. 氧化物薄膜电子器件
2. 低维半导体材料
3. 发光器件、光电探测器、太阳能电池等光电子器件应用研究
承担项目及代表性研究成果
主持国家自然科学基金青年基金、JW科技委173项目、重庆市自然科学基金面上项目等国家及省部级项目8项;在Sci. Bullet., Nano Lett., IEEE Electron Device Lett., Appl. Phys. Lett.等上发表SCI论文60余篇,其中第一/通讯作者论文29篇,他引近2000次;出版全英文专著1部(排第二);入选国家博士后国(境)外交流计划引进项目,获2019国家优秀自费留学生奖学金。
代表性论文
1. Multidentate chelation achieves bilateral passivation toward efficient and stable perovskite solar cells with minimized energy losses, H. Yang, R. Li, S. Gong, H. Wang, S. Qaid, Q. Zhou, W. Cai*, X. Chen*, J. Chen* & Z. Zang*, Nano Letters, 23(18), 8610-8619, 2023 (共同通讯)
2. Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics, M. Li, Q. Zhuang, S. Lu, Z. Zang & W. Cai*, Applied Physics Letters, 122(16), 162104, 2023 (唯一通讯)
3. Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping, W. Cai, M. Li, H. Li, Q. Qian & Z. Zang, Applied Physics Letters, 121(6), 062108, 2022 (第一作者)
4. Significant performance enhancement of UV-Vis self-powered CsPbBr3 quantum dot-based photodetectors induced by ligand modification and P3HT embedding, M. Wang, D. Liang, W. Ma, Q. Mo, Z. Zang, Q. Qian & W. Cai*, Optics Letters, 47(17), 4512-4515, 2022 (唯一通讯)
5. One-Volt, Solution-Processed InZnO Thin-Film Transistors, W. Cai, H. Li & Z. Zang, IEEE Electron Device Letters, 42(4), 525-528, 2021 (第一作者)
6. 2D perovskite for field-effect transistors, W. Cai, H. Wang, Z. Zang & L. Ding, Science Bulletin, 66(7), 648-650, 2021 (第一作者)
7. Room temperature synthesis of Sn2+ doped highly luminescent CsPbBr3 quantum dots for high CRI white light-emitting diodes, Y. Dong, Q. Mo, S. Zhao, W. Cai* & Z. Zang, Nanoscale, 13(21), 9740-9746, 2021 (共同通讯)
8. Significant Performance Improvement of Oxide Thin-Film Transistors by a Self-Assembled Monolayer Treatment, W. Cai, J. Zhang, J. Wilson, J. Brownless, S. Park, L. Majewski & A. Song, Advanced Electronic Materials, 6(5), 1901421, 2020 (第一作者)
9. Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment, W. Cai, J. Wilson, J. Zhang, J. Brownless, X. Zhang, L. Majewski & A. Song, ACS Applied Electronic Materials, 2(1), 301-308, 2020 (第一作者)
10. One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric, W. Cai, S. Park, J. Zhang, J. Wilson, Y. Li, Q. Xin, L. Majewski & A. Song, IEEE Electron Device Letters, 39(8), 375-378, 2018 (第一作者)
联系方式
邮箱:wensi.cai@cqu.edu.cn
办公地址:重庆大学虎溪校区信息大楼B326-3